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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHVIC915R2/D The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola's newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP-16 flat pack package that provides excellent thermal performance through a solderable backside contact. * Typical CDMA Performance: 869-894 MHz, 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, 1-Carrier N-CDMA, IS-95 CDMA 9-Channel Forward Driver Application Output Power -- 23 dBm Power Gain -- 31 dB Adjacent Channel Power Ratio -- -60 dBc @ 750 kHz in a 30 kHz BW -66 dBc @ 1.98 MHz in a 30 kHz BW Output Application Output Power -- 34 dBm PAE = 21% Adjacent Channel Power Ratio -- -50 dBc @ 750 kHz in a 30 kHz BW * Typical GSM Performance: 921-960 MHz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm Output) * On-Chip Current Mirror gm Sensing FET for Self Bias Application * Integrated Temperature Compensation Capability * Usable for SCPA and MCPA Architecture * Integrated ESD Protection * Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MHVIC915R2 CDMA, GSM/GSM EDGE 746-960 MHz, 15 W, 27 V RF LDMOS WIDEBAND INTEGRATED AMPLIFIER CASE 978-03 PFP-16 PLASTIC VBSD VBSG VD1 N.C. 2 Stage IC VD2/RFout VBSD VBSG RFin IC VD1 Gnd VG1 VG2 RFin Temperature Compensation VG1 VG2 PIN CONNECTIONS 1 2 3 4 5 6 7 8 (Top View) 16 15 14 13 12 11 10 9 N.C. VD2/RFout VD2/RFout VD2/RFout VD2/RFout VD2/RFout VD2/RFout N.C. REV 3 MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA MHVIC915R2 1 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value 65 -0.5, +15 -65 to +150 150 Unit Vdc Vdc C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = 0.2 W CW) Output Application (Pout = 2.5 W CW) GSM Application (Pout = 15 W CW) Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA Stage 1, 27 Vdc, IDQ = 80 mA Stage 2, 27 Vdc, IDQ = 120 mA Stage 1, 26 Vdc, IDQ = 50 mA Stage 2, 26 Vdc, IDQ = 140 mA Symbol RJC 5.07 Max Unit C/W 3.73 3.41 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M1 (Minimum) C4 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22-A113 Rating 3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit CDMA FUNCTIONAL TESTS (In Motorola CDMA Test Fixture, 50 hm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 880 MHz, 1-Carrier N-CDMA, IS-95 CDMA 9-Channel Forward Common-Source Amplifier Power Gain (Pout = 23 dBm) Power Added Efficiency (Pout = 34 dBm) Input Return Loss (Pout = 23 dBm) Adjacent Channel Power Ratio (Pout = 23 dBm) @ 750 kHz offset in 30 kHz BW Adjacent Channel Power Ratio (Pout = 34 dBm) @ 750 kHz offset in 30 kHz BW Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps IRL ACPR ACPR GF IBSD 29 -- -- -- -- -- 0.8 31 21 -12 -60 -50 0.2 1.2 -- -- -9 -55 -- 0.4 1.6 dB % dB dBc dBc dB mA (continued) MHVIC915R2 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit PERFORMANCE TESTS (In Motorola Test Fixture, 50 hm system) VDS = 27 V, IDQ1 = 80 mA, IDQ2 = 120 mA, 865-895 MHz Rating Quiescent Current Accuracy over Temperature (-10 to 85C) at Nominal Value Gain Flatness @ Pout = 23 dBm (800 MHz to 960 MHz) Deviation from Linear Phase @ Pout = 23 dBm Group Delay @ Pout = 23 dBm Insertion Phase Window @ Pout = 23 dBm (part to part) Symbol Iqt GF Delay Min -- -- -- -- -- Typ 5 0.20 0.2 2.2 10 Max -- -- -- -- -- Unit % dB ns GSM FUNCTIONAL TESTS (In Motorola GSM Test Fixture, 50 hm system) VDS = 26 V, IDQ1 = 50 mA, IDQ2 = 140 mA, 921-960 MHz, CW Rating Output Power at 1dB Compression Point Common-Source Amplifier Power Gain @ P1dB Drain Efficiency @ P1dB Input return Loss @ P1dB EVM @ 5 W Third Order Intermodulation Distortion (15 W PEP, 2 Tone 100 kHz spacing) Drain Efficiency (15 W PEP, 2 Tone 100 kHz spacing) Symbol P1dB Gain IRL -- IMD3 Min -- -- -- -- -- -- -- Typ 15 30 56 -16 0.9 -30 35 Max -- -- -- -- -- -- -- Unit Watts dB % dB % dBc % MOTOROLA RF DEVICE DATA MHVIC915R2 3 VBSD VBIAS BSG R5 VD1 C8 RF INPUT Z1 C7 Z11 1 NC 2 3 4 5 6 NC 16 15 14 13 12 11 Temperature Compensation 10 NC 9 Z2 Z6 Z3 Z4 C1 C2 Z5 Z8 C3 Z9 C4 Z7 C5 + C6 VD2 RF OUTPUT C13 Z12 VBIAS1 R1 C11 R3 C12 VGS1 7 8 Z10 VBIAS2 R2 C10 R4 C9 VGS2 Z1 Z2 Z3 Z4 Z5 Z6 0.0438 x 0.400 50 Microstrip 0.1709 x 0.1004 Microstrip (not including IC pad length) 0.1222 x 0.1944 Microstrip 0.0836 x 0.3561 Microstrip 0.0438 x 0.2725 Microstrip 0.0504 x 0.3378 Microstrip Z7 Z8 Z9 Z10 Z11 Z12 PCB 0.0504 x 0.480 Microstrip 0.0252 x 0.843 Microstrip 0.0252 x 0.167 Microstrip 0.040 x 0.850 Microstrip 0.025 x 0.400 Microstrip 0.020 x 0.710 Microstrip Rogers 4350, 0.020, r = 3.50 Figure 1. MHVIC915 746-960 MHz Test Circuit Schematic Table 1. MHVIC915 746-960 MHz Test Circuit Component Designations and Values Part C1, C2 C3, C4 C5, C8, C10, C11 C6 C7, C9, C12 C13 R1, R2, R5 R3, R4 Description 4.7 pF High Q Capacitors (0603) 47 pF NPO Capacitors (0805) 1 F X7R Chip Capacitors (1214) 10 F, 50 V Electrolytic Capacitor 0.01 F X7R Chip Capacitors (0805) 8.2 pF NPO Chip Capacitor (0805) 1 kW Chip Resistors (0603) 100 kW Chip Resistors (0603) Value, P/N or DWG ATC600S4R7CW GRM40-001COG470J050BD GRM42-2X7R105K050AL ECEV1HA100SP GRM40X7R103J050BD GRM40-001COG8R2C050BD RM73B2AT102J RM73B2AT104J Manufacturer ATC Murata Murata Panasonic Murata Murata KOA Speer KOA Speer MHVIC915R2 4 MOTOROLA RF DEVICE DATA MHVIC915 Rev 0 VD1 VBIAS BSG VBSD VD2 R5 C6 C8 C4 C7 C2 C5 C1 C13 C3 C9 R4 C10 C12 R3 C11 R1 VBIAS1 VBIAS2 R2 Figure 2. MHVIC915 746-960 MHz Test Circuit Component Layout MOTOROLA RF DEVICE DATA MHVIC915R2 5 TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM) 35 34 G ps , POWER GAIN (dB) 33 32 31 30 29 28 27 26 0.1 1 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 10 100 Pout, OUTPUT POWER (WATTS) 85_C TC = -30_C , DRAIN EFFICIENCY (%) 25_C 50 45 40 35 30 25 20 15 10 5 0 0.1 1 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 10 100 Pout, OUTPUT POWER (WATTS) 25_C 85_C Figure 3. Power Gain versus Output Power Figure 4. Drain Efficiency versus Output Power 22 PAE, POWER ADDED EFFICIENCY (%) 35 34 G ps , POWER GAIN (dB) 33 32 31 30 29 28 750 85_C VDD = 26 Vdc, Pout = 2.5 W IDQ1 = 50 mA, IDQ2 = 140 mA 25_C TC = -30_C 21.5 21 20.5 20 19.5 VDD = 26 Vdc, Pout = 2.5 W IDQ1 = 50 mA, IDQ2 = 140 mA 750 800 850 900 950 f, FREQUENCY (MHz) TC = -30_C 25_C 85_C 1000 800 850 900 950 1000 f, FREQUENCY (MHz) Figure 5. Power Gain versus Frequency Figure 6. Power Added Efficiency versus Frequency SPECTRAL REGROWTH @ 400 kHz (dBc) 1.2 EVM, ERROR VECTOR MAGNITUDE (%) 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0 1 2 3 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 4 5 6 Pout, OUTPUT POWER (WATTS) TC = -30_C 25_C 85_C -60 -62 -64 -66 -68 -70 -72 -74 -76 -78 -80 0 1 2 3 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 4 5 6 Pout, OUTPUT POWER (WATTS) TC = -30_C 85_C 25_C Figure 7. Error Vector Magnitude versus Output Power Figure 8. Spectral Regrowth @ 400 kHz versus Output Power MHVIC915R2 6 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM) SPECTRAL REGROWTH @ 600 kHz (dBc) TC = -30_C 25_C 85_C IMD, INTERMODULATION DISTORTION (dBc) -76.5 -77 -77.5 -78 -78.5 -79 -79.5 -80 -80.5 -81 -81.5 0 1 2 3 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 4 5 6 Pout, OUTPUT POWER (WATTS) -20 -25 -30 -35 -40 -45 -50 -55 0.1 7th Order 5th Order VDD = 26 Vdc, Pout = 7.5 W (Avg.) IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 3rd Order 1 10 100 TONE SPACING (MHz) Figure 9. Spectral Regrowth @ 600 kHz versus Output Power Figure 10. Two-Tone Broadband Performance 33 32 G ps , POWER GAIN (dB) 31 30 29 28 27 26 25 5 10 15 20 3 mW IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz 25 30 35 Pin = 1 mW 2 mW 32.5 32 G ps , POWER GAIN (dB) 31.5 31 30.5 30 29.5 29 28.5 28 5 10 15 20 0.07 mW Pin = 0.275 mW 0.14 mW IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz 25 30 35 VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) Figure 11. Power Gain versus Supply Voltage Figure 12. Power Gain versus Supply Voltage -5 IRL, INPUT RETURN LOSS (dB) -10 ACPR (dBc) -15 -20 -25 -30 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) TC = -30_C 25_C 85_C -35 -40 -45 -50 -55 -60 TC = 85_C 25_C -30_C 0 1 2 3 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 4 5 6 N-CDMA IS-95, 9-Channel Forward 1.228 MHz Channel Bandwidth ACPR: 750 kHz @ 30 kHz Integrated Bandwidth Pout, OUTPUT POWER (WATTS) Figure 13. Input Return Loss versus Output Power Figure 14. Adjacent Channel Power Ratio versus Output Power MOTOROLA RF DEVICE DATA MHVIC915R2 7 Zo = 50 Zload f = 750 MHz Zin f = 960 MHz f = 750 MHz f = 960 MHz VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, Pout = 1.25 W CW f MHz 750 765 780 795 810 825 840 855 870 885 900 915 930 945 960 Zin 42.11 - j2.79 40.86 - j1.37 40.09 + j0.06 39.77 + j1.52 39.89 + j3.01 40.49 + j4.39 41.48 + j5.70 42.89 + j6.73 43.51 + j7.03 46.81 + j7.87 49.21 + j7.74 51.79 + j7.02 54.48 + j5.65 57.05 + j3.61 59.16 + j0.75 Zload 8.24 + j5.33 8.31 + j5.56 8.39 + j5.82 8.50 + j5.95 8.62 + j6.02 8.82 + j6.12 8.94 + j6.19 9.12 + j6.17 9.16 + j6.12 9.33 + j6.09 9.38 + j5.95 9.50 + j5.85 9.47 + j5.73 9.54 + j5.63 9.42 + j5.45 Z in Z load Zin = Device input impedance as measured from RF input to ground. = Test circuit impedance as measured from drain to ground. Output Matching Network Zload Device Under Test Figure 15. Series Equivalent Input and Output Impedance MHVIC915R2 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MHVIC915R2 9 NOTES MHVIC915R2 10 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MHVIC915R2 11 PACKAGE DIMENSIONS h X 45 _ A E2 1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --0.600 0_ 7_ 0.200 0.200 0.100 14 x e D e/2 D1 8 9 E1 8X B BOTTOM VIEW E CB S bbb Y M c A A2 DATUM PLANE SEATING PLANE H aaa C SECT W-W ccc C L1 q W W L 1.000 0.039 DETAIL Y A1 GAUGE PLANE CASE 978-03 ISSUE B PFP-16 PLASTIC Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MHVIC915R2 12 CC EE CC CC b M b1 c1 CA S MOTOROLA RF DEVICE DATA MHVIC915R2/D |
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